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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/51376
Title: Relaxation dynamics and residual strain in metamorphic AlSb on GaAs
Authors: Ripalda, José María ; Sánchez, A. M.; Taboada, Alfonso G.; Rivera de Mena, Antonio ; Alén, Benito ; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; Rotter, T. J.; Balakrishnan, G.
Issue Date: 2012
Publisher: American Institute of Physics
Citation: Applied Physics Letters 100(1): 012103 (2012)
Abstract: We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer. © 2012 American Institute of Physics.
Publisher version (URL): http://dx.doi.org/10.1063/1.3674986
URI: http://hdl.handle.net/10261/51376
DOI: 10.1063/1.3674986
Identifiers: issn: 0003-6951
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