Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/51376
Título : Relaxation dynamics and residual strain in metamorphic AlSb on GaAs
Autor : Ripalda, José María, Sánchez, A. M., Taboada, A. G., Rivera de Mena, Antonio, Alén, Benito, González Díez, Yolanda, González Sotos, Luisa, Briones Fernández-Pola, Fernando, Rotter, T. J., Balakrishnan, G.
Fecha de publicación : 2012
Editor: American Institute of Physics
Citación : Applied Physics Letters 100(1): 012103 (2012)
Resumen: We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer. © 2012 American Institute of Physics.
Versión del editor: http://dx.doi.org/10.1063/1.3674986
URI : http://hdl.handle.net/10261/51376
Identificadores: doi: 10.1063/1.3674986
issn: 0003-6951
Citación : Applied Physics Letters 100(1): 012103 (2012)
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