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Open Access item Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Authors:Ripalda, José María
Sánchez, A. M.
Taboada, A. G.
Rivera, Antonio
Alén, Benito
González, Yolanda
González, Luisa
Briones Fernández-Pola, Fernando
Rotter, T. J.
Balakrishnan, G.
Issue Date:2012
Publisher:American Institute of Physics
Citation:Applied Physics Letters 100(1): 012103 (2012)
Abstract:We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer. © 2012 American Institute of Physics.
Publisher version (URL):http://dx.doi.org/10.1063/1.3674986
Identifiers:doi: 10.1063/1.3674986
issn: 0003-6951
Appears in Collections:(IMM-CNM) Artículos

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