English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/50557
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

DC FieldValueLanguage
dc.contributor.authorPostigo, Pablo Aitor-
dc.contributor.authorGolmayo, Dolores-
dc.contributor.authorGómez, H.-
dc.contributor.authorRodríguez, D.-
dc.contributor.authorDotor, María Luisa-
dc.identifierissn: 0021-4922-
dc.identifier.citationJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes 41: L565-L567 (2002)-
dc.description.abstractWe report on the characteristics of tensile-strained 1.3 μm InGaAsP multi-quantum well lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide. Growth was carded out by all solid source atomic layer molecular beam epitaxy (ALMBE) without growth interruptions. Infinite length threshold current densities are as low as 176 A/cm2 per quantum well for as cleaved broad area lasers. The values for the characteristic temperature T0 are as high as 90 K for cavity lengths of 1200 μm. The improvement in To is attributed to the increased effective barrier height by the short-period superlattices.-
dc.publisherInstitute of Pure and Applied Physics-
dc.titleImprovement of the temperature characteristic of 1.3 μm Gainasp laser diodes with GaInAsP/InP short-period superlattice barriers-
dc.description.versionPeer Reviewed-
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show simple item record

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.