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dc.contributor.authorPostigo, Pablo Aitor-
dc.contributor.authorGolmayo, Dolores-
dc.contributor.authorGómez, H.-
dc.contributor.authorRodríguez, D.-
dc.contributor.authorDotor, María Luisa-
dc.date.accessioned2012-05-31T14:25:57Z-
dc.date.available2012-05-31T14:25:57Z-
dc.date.issued2002-
dc.identifierissn: 0021-4922-
dc.identifier.citationJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes 41: L565-L567 (2002)-
dc.identifier.urihttp://hdl.handle.net/10261/50557-
dc.description.abstractWe report on the characteristics of tensile-strained 1.3 μm InGaAsP multi-quantum well lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide. Growth was carded out by all solid source atomic layer molecular beam epitaxy (ALMBE) without growth interruptions. Infinite length threshold current densities are as low as 176 A/cm2 per quantum well for as cleaved broad area lasers. The values for the characteristic temperature T0 are as high as 90 K for cavity lengths of 1200 μm. The improvement in To is attributed to the increased effective barrier height by the short-period superlattices.-
dc.language.isoeng-
dc.publisherInstitute of Pure and Applied Physics-
dc.rightsclosedAccess-
dc.titleImprovement of the temperature characteristic of 1.3 μm Gainasp laser diodes with GaInAsP/InP short-period superlattice barriers-
dc.typeartículo-
dc.date.updated2012-05-31T14:25:57Z-
dc.description.versionPeer Reviewed-
Appears in Collections:(IMN-CNM) Artículos
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