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|Title:||Surface reconstructions of InGaAs alloys|
|Authors:||Ripalda, José María; Jones, T. S.|
|Citation:||Surface Science 600: 973-982 (2006)|
|Abstract:||The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1-xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence. © 2005 Elsevier B.V. All rights reserved.|
|Appears in Collections:||(IMS-CNM) Artículos|
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