Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/50506
Título : Surface reconstructions of InGaAs alloys
Autor : Ripalda, José María, Jones, T. S.
Fecha de publicación : 2006
Editor: Elsevier
Citación : Surface Science 600: 973-982 (2006)
Resumen: The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1-xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence. © 2005 Elsevier B.V. All rights reserved.
URI : http://hdl.handle.net/10261/50506
Identificadores: doi: 10.1016/j.susc.2005.12.015
issn: 0039-6028
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