English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/50506
Title: Surface reconstructions of InGaAs alloys
Authors: Ripalda, José María ; Jones, T. S.
Issue Date: 2006
Publisher: Elsevier
Citation: Surface Science 600: 973-982 (2006)
Abstract: The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1-xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence. © 2005 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/10261/50506
DOI: 10.1016/j.susc.2005.12.015
Identifiers: doi: 10.1016/j.susc.2005.12.015
issn: 0039-6028
Appears in Collections:(IMS-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.