Please use this identifier to cite or link to this item:
http://hdl.handle.net/10261/48862Share/Export:
 SHARE
 CORE
BASE
|
|
| Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
| Title: | Pattern transfer optimization for the fabrication of arrays of silicon nanowires |
Authors: | Gebremichael, Yamane; Sánchez, Ana; Borrisé, Xavier CSIC ORCID; Schmidt, Malte; Goñi, Alejandro R. CSIC ORCID; Alonso Carmona, M. Isabel CSIC ORCID ; Rurali, Riccardo CSIC ORCID ; Perez Murano, Francesc X. CSIC ORCID | Keywords: | Nanowires Optoelectronics Scalloping Deep reactive-ion etching Electron-beam lithography Oxidation Photoluminescence |
Issue Date: | 2010 | Publisher: | Elsevier | Citation: | Microelectronic Engineering 87(5-8): 1479-1482 (2010) | Abstract: | The main challenges toward massive fabrication of silicon nanowires are the way to control the crystal orientation and size. In the present work, we report advances in the pattern transfer process to obtain arrays of holes on a Si substrate, aiming at the fabrication of ordered arrays of quantum wires. The wires obtained from this procedure can be uniform in terms of doping profile, crystal orientation and size, while enormously simplifying metallic contacting for applications where parallel biasing is needed. The samples have been fabricated using a combination of electron-beam lithography and reactive-ion etching. Electron-beam lithography is performed at 10 keV on a 100 nm thick 950 K PMMA. A specific recipe for deep reactive-ion etching was developed in order to minimize any widening or under-etching of the holes, as well as any type of wall roughness. Holes with diameters from 30 nm up to 900 nm, and pitch from 90 nm up to 1000 nm were fabricated, achieving no observable scalloping. The sample has been oxidized for further reduction of the size of interconnects (the site between two holes) and interstitials (the site between three holes). As a result, thin nanowires have been fabricated. | Description: | 4 páginas, 6 figuras, 2 tablas.-- Trabajo presentado al: "The 35th International Conference on Micro- and Nano-Engineering (MNE)".-- et al. | Publisher version (URL): | http://dx.doi.org/10.1016/j.mee.2009.11.086 | URI: | http://hdl.handle.net/10261/48862 | DOI: | 10.1016/j.mee.2009.11.086 | ISSN: | 0167-9317 |
| Appears in Collections: | (CIN2) Artículos (IMB-CNM) Artículos (ICMAB) Artículos |
Show full item record
CORE Recommender
SCOPUSTM
Citations
1
checked on Apr 17, 2024
WEB OF SCIENCETM
Citations
1
checked on Feb 22, 2024
Page view(s)
344
checked on Apr 19, 2024
Google ScholarTM
Check
Altmetric
Altmetric
WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.