(InP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 μm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy

Abstract

Room temperature laser emission near 1.55µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340°C by all-solid source Atomic Layer Molecular Beam Epitaxy , where (lnP)5/(Ga0.47 In0.53 As)5, lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga0.27 In0.73 As wells . These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.