Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/48313
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Título : (InP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 μm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy
Autor : Dotor, María Luisa, Huertas, P., Postigo, Pablo Aitor, Golmayo, Dolores, Briones Fernández-Pola, Fernando
Palabras clave : Ultra short light pulses
Mode locking
Intensity correlation
Nonlinear optics
Fecha de publicación : 2010
Editor: European Optical Society
Citación : Journal of the European Optical Society 5: 10049s (2010)
Resumen: Room temperature laser emission near 1.55µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340°C by all-solid source Atomic Layer Molecular Beam Epitaxy , where (lnP)5/(Ga0.47 In0.53 As)5, lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga0.27 In0.73 As wells . These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.
Versión del editor: http://dx.doi.org/10.2971/jeos.2010.10049s
URI : http://hdl.handle.net/10261/48313
ISSN: 1990-2573
DOI: 10.2971/jeos.2010.10049s
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