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dc.contributor.authorSánchez, A. M.-
dc.contributor.authorTaboada, Alfonso G.-
dc.contributor.authorRipalda, José María-
dc.contributor.authorMolina, Sergio I.-
dc.date.accessioned2012-04-16T09:31:49Z-
dc.date.available2012-04-16T09:31:49Z-
dc.date.issued2010-03-10-
dc.identifier.citationNanotechnology 21: 145606 (2010)es_ES
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10261/48294-
dc.description.abstractThe addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.es_ES
dc.description.sponsorshipThis work was supported by the Spanish MCI (TEC2008- 06756-C03-02/TEC) and the Junta de Andalucia (PAI research group TEP-120). AMS would like to thank the Science City Research Alliance and the HEFCE Strategic Development Fund for funding support.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.rightsclosedAccesses_ES
dc.titleBlocking of indium incorporation by antimony in III–V-Sb nanostructureses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1088/0957-4484/21/14/145606-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1088/0957-4484/21/14/145606es_ES
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