Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/48294
Share/Impact:
Título : Blocking of indium incorporation by antimony in III–V-Sb nanostructures
Autor : Sánchez, A. M., Taboada, A. G., Ripalda, José María, Molina, Sergio I.
Fecha de publicación : 10-Mar-2010
Editor: Institute of Physics Publishing
Resumen: The addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.
Versión del editor: http://dx.doi.org/10.1088/0957-4484/21/14/145606
URI : http://hdl.handle.net/10261/48294
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/14/145606
Citación : Nanotechnology 21: 145606 (2010)
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
There are no files associated with this item.
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.