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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/48294
Title: Blocking of indium incorporation by antimony in III–V-Sb nanostructures
Authors: Sánchez, A. M.; Taboada, A. G.; Ripalda, José María; Molina, Sergio I.
Issue Date: 10-Mar-2010
Publisher: Institute of Physics Publishing
Citation: Nanotechnology 21: 145606 (2010)
Abstract: The addition of antimony to III–V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.
Publisher version (URL): http://dx.doi.org/10.1088/0957-4484/21/14/145606
URI: http://hdl.handle.net/10261/48294
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/14/145606
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