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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/48212
Title: Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Authors: Beltrán, A. M.; Ben, Teresa; Sánchez, A. M.; Ripalda, José María ; Taboada, Alfonso G.; Molina, Sergio I.
Keywords: Quantumdots
Transmission electron microscopy
Issue Date: Jun-2011
Publisher: Elsevier
Citation: Materials Letters 65(11): 1608-1610 (2011)
Abstract: GaSb incorporation to InAs/GaAsquantumdots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediateGaAslayer is considered a good approach. In this work, we study the effect of the introduction of aGaAsintermediatelayer between InAsquantumdots and aGaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAsintermediatelayer increases, a reduction of defect density has been observed as well as changes of quantumdots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures.
Publisher version (URL): http://dx.doi.org/10.1016/j.matlet.2011.02.086
URI: http://hdl.handle.net/10261/48212
DOI: 10.1016/j.matlet.2011.02.086
ISSN: 0167-577X
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