Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/48212
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Título : Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Autor : Beltrán, A. M., Ben, Teresa, Sánchez, A. M., Ripalda, José María, Taboada, A. G., Molina, Sergio I.
Palabras clave : Quantumdots
GaAs–GaSb–InAs
Transmission electron microscopy
Defects
Fecha de publicación : Jun-2011
Editor: Elsevier
Citación : Materials Letters 65(11): 1608-1610 (2011)
Resumen: GaSb incorporation to InAs/GaAsquantumdots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediateGaAslayer is considered a good approach. In this work, we study the effect of the introduction of aGaAsintermediatelayer between InAsquantumdots and aGaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAsintermediatelayer increases, a reduction of defect density has been observed as well as changes of quantumdots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures.
Versión del editor: http://dx.doi.org/10.1016/j.matlet.2011.02.086
URI : http://hdl.handle.net/10261/48212
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2011.02.086
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