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a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er³⁺ doped a-Al₂2O₃ thin films

AuthorsToudert, Johann ; Núñez Sánchez, Sara ; Jiménez de Castro, Miguel ; Serna, Rosalía
Keywords[PACS] Optical properties of specific thin films
[PACS] Other solid inorganic materials
[PACS] Thin film structure and morphology
[PACS] Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue Date28-Mar-2008
PublisherAmerican Institute of Physics
CitationApplied Physics Letters, 92 (12) : 121111 (2008)
AbstractA structured film formed by an active Er³⁺-doped amorphous Al₂O₃ layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er³⁺-doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er³⁺ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er³⁺ ions.
Description3 pags. ; 3 figs.
Publisher version (URL)http://dx.doi.org/10.1063/1.2900662
Appears in Collections:(CFMAC-IO) Artículos
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