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dc.contributor.authorMarcano, N.-
dc.contributor.authorSangiao, S.-
dc.contributor.authorMagen, Cesar-
dc.contributor.authorMorellón, Luis-
dc.contributor.authorIbarra, M. Ricardo-
dc.contributor.authorPlaza, M.-
dc.contributor.authorPérez, L.-
dc.contributor.authorTeresa, José María de-
dc.date.accessioned2012-04-02T07:30:55Z-
dc.date.available2012-04-02T07:30:55Z-
dc.date.issued2010-09-
dc.identifier.citationPhysical Review B 82(12): 125326 (2010)es_ES
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10261/47771-
dc.description6 páginas, 8 figuras, 1 tabla.-- PACS number(s): 73.20.-r, 73.25.+i, 73.50.Jtes_ES
dc.description.abstractWe have investigated the magnetotransport properties of ultrathin films of Bi grown on thermally oxidized Si(001) substrates with thickness ranging from 10 to 100 nm at temperatures down to 2 K and in magnetic fields up to 90 kOe. Remarkable differences both in temperature and field dependence of the Hall resistivity are found for the films with thickness above and below 20 nm. These observations can be explained due to the presence of surface states, which play an important role in determining the electronic transport properties of the thinnest films. The estimated surface carrier density 4×1013 cm−2 at room temperature correlates well with that recently reported from angle-resolved photoemission spectroscopy on ultrathin Bi(001) films.es_ES
dc.description.sponsorshipThis work was supported by Spanish Ministry of Science (through Projects No. MAT2007-65965-C02-02 and No. MAT2008-06567-C02) including FEDER funding, the Aragón Regional Government and the Universidad Complutense de Madrid. N.M. and S.S. acknowledge financial support from Spanish CSIC (JAE program) and Spanish MEC (FPU program). M.P. acknowledges Comunidad de Madrid and European Social Fund for financial support.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Physical Societyes_ES
dc.rightsopenAccesses_ES
dc.titleRole of the surface states in the magnetotransport properties of ultrathin bismuth filmses_ES
dc.typeArtículoes_ES
dc.identifier.doi10.1103/PhysRevB.82.125326-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.82.125326es_ES
dc.identifier.e-issn1550-235X-
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