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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/47103
Title: Modelling strategies for semiconductor ring lasers
Authors: Pérez Serrano, Antonio; Fürst, Sandor; Javaloyes, Julien; Scirè, Alessandro; Balle, Salvador; Sorel, Marc
Keywords: Semiconductor lasers
Ring lasers
Modal properties
Coupled cavities
Laser dynamic
Issue Date: 2008
Publisher: Society of Photo-Optical Instrumentation Engineers
Citation: Proceedings of SPIE 6997: 69971N (2008)
Abstract: We have analyzed experimentally and theoretically the modal properties of a semiconductor ring laser and the wavelength jumps that occur in connection with directional switching above threshold. A transfer matrix analysis allow us to explain the transfer function measurements when amplified spontaneous emission in the cavity is accounted for. Moreover the transfer matrix analysis permits to determine the threshold condition for the laser modes, which split in two branches due to the symmetry breaking imposed by the output coupler and output waveguides. The wavelength jumps displayed by the device above threshold are interpreted with the frequency splitting and threshold difference between these two branches of solutions, together with the redshift of the material gain.
Publisher version (URL): http://dx.doi.org/10.1117/12.780847
URI: http://hdl.handle.net/10261/47103
ISSN: 1996-756X
DOI: 10.1117/12.780847
E-ISSN: 0277-786X
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