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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/46959
Title: In situ observation of surface optical anisotropy on InP, InAs, and InSb by chemical modulation spectroscopy
Authors: Postigo, Pablo Aitor; Armelles Reig, Gaspar; Utzmeier, T.; Briones Fernández-Pola, Fernando
Issue Date: 15-Jan-1998
Publisher: American Physical Society
Citation: Physical Review B 57(3): 1362–1365 (1998)
Abstract: In situ observation of surface optical anisotropy due to In dimers in a set of three In-based semiconductor binary compounds—InP, InAs, and InSb—grown by molecular-beam epitaxy is reported. We used an optical reflection technique based on the chemical modulation of the surface, that permits the measurement with light linearly polarized in one selected polarization, usually [110] or [11¯0], typically parallel to the group-III and -V dimers. Spectra for (001) surfaces in the 1–3-eV range were obtained through this technique, and the results are compared to those previously obtained for a set of Ga-based binary compounds, GaP, GaAs and GaSb. For both sets, well-defined features for light polarized along [110] have been observed, that are attributed to transitions between the occupied group-III dimer and the unoccupied dangling-bond bands.
Publisher version (URL): http://dx.doi.org/10.1103/PhysRevB.57.1362
URI: http://hdl.handle.net/10261/46959
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.57.1362
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