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| Título: | Simulation of electrical parameters of new design of SLHC silicon sensors for large radii |
Autor: | Militaru, O.; González Sánchez, J. CSIC ; Jaramillo, R. CSIC ORCID ; Moya, David CSIC; Rodrigo, Teresa CSIC ORCID ; López Virto, A. CSIC ORCID ; Vila, Iván CSIC ORCID | Fecha de publicación: | may-2010 | Editor: | Elsevier | Citación: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 617(1-3): 11-21 (2010) | Resumen: | As are sult of the high luminosity phase of the SLHC, for CMS a tracking system with very high granularity is mandatory and the sensors will have to with stand a next remeradiation environment of up to 1016 part/2. On this basis, a new geometry with silicon short strip sensors (strixels) is proposed. Tounder stand their performances, test geometries are developed whose parameters can be verified and optimized using simulation of semiconductor structures. We have used the TCAD-ISE (SYNOPSYSpackage) software in order to simulate the main electrical parameters of different strip geometries, forp-in-n-type wafers. | Descripción: | 2 páginas,1 figura, 1 tabla.-- El Pdf del artículo es la versión de autor.-- et al. | Versión del editor: | http://dx.doi.org/10.1016/j.nima.2009.09.102 | URI: | http://hdl.handle.net/10261/46682 | DOI: | 10.1016/j.nima.2009.09.102 | ISSN: | 0168-9002 |
| Aparece en las colecciones: | (IFCA) Artículos |
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| ELBA_Otilia.pdf | 158,2 kB | Adobe PDF |  Visualizar/Abrir |
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