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Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

AuthorsFerrando, A.; Brochero Cifuentes, J. A. ; Calderon, Alicia ; Fernández, M. ; Gómez, G. ; González Sánchez, J. ; Martínez-Rivero, Celso ; Matorras, Francisco ; Rodrigo, Teresa ; Ruiz-Árbol, P.; Scodellaro, Luca ; Sobron Sañudo, M. ; Vila, Iván ; López Virto, A.
Amorphous silicon
Position sensing detectors
Direct and inverseStaebler–Wronski effects
Issue DateMar-2011
CitationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 632(1): 164-166 (2011)
AbstractThe photo-response behaviour of Amorphous Silicon Position Detectors(ASPDs)under prolonged illumination with a 681nm diode–laser and a 633 nm He–Ne laser is presented. Both direct and inverse Staebler–Wronski effects are observed.
Description3 páginas, 3 figuras.-- Letter to the Editor.-- et al.
Publisher version (URL)http://dx.doi.org/10.1016/j.nima.2010.12.201
Appears in Collections:(IFCA) Artículos
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