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Closed Access item Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

Authors:Ferrando, A.
Brochero Cifuentes, J. A.
Calderón, A.
Fernández, M. G.
Gómez, G.
González Sánchez, J.
Martínez-Rivero, Celso
Matorras, Francisco
Rodrigo, Teresa
Ruiz-Árbol, P.
Scodellaro, Luca
Sobron Sañudo, M.
Vila, Iván
López Virto, A.
Keywords:ASPD, Amorphous silicon, Position sensing detectors, Direct and inverseStaebler–Wronski effects
Issue Date:Mar-2011
Citation:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 632(1): 164-166 (2011)
Abstract:The photo-response behaviour of Amorphous Silicon Position Detectors(ASPDs)under prolonged illumination with a 681nm diode–laser and a 633 nm He–Ne laser is presented. Both direct and inverse Staebler–Wronski effects are observed.
Description:3 páginas, 3 figuras.-- Letter to the Editor.-- et al.
Publisher version (URL):http://dx.doi.org/10.1016/j.nima.2010.12.201
Appears in Collections:(IFCA) Artículos

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