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Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

AuthorsCamara, Nicolas; Jouault, Benoit; Jabakhanji, Bilal; Caboni, Alessandra; Tiberj, Antoine; Consejo, Christophe; Godignon, Philippe; Camassel, Jean
Issue Date14-Feb-2011
PublisherBioMed Central
CitationNanoscale Research Letters. 14;6(1):141 (2011)
AbstractAbstract Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.
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