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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/44926
Title: Growth of low-density vertical quantum dot molecules with control in energy emission
Authors: Alonso-González, Pablo ; González Sotos, Luisa ; Martín-Sánchez, Javier; González Díez, Yolanda ; Fuster, David ; Sales, David L.; Hernández-Maldonado, D.; Herrera, Miriam; Molina, Sergio I.
Keywords: Molecular beam epitaxy
Droplet epitaxy
Quantum dots
Issue Date: 5-Sep-2010
Publisher: Springer
Citation: Nanoscale Research Letters 5:1913-1916 (2010)
Abstract: In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emission energy of the first layer of QD forming the molecule can be tuned by the deposition of controlled amounts of InAs at a nanohole template formed by GaAs droplet epitaxy. The QD of the second layer are formed directly on top of the buried ones by a strain-driven process. In this way, either symmetric or asymmetric vertically coupled structures can be obtained. As a characteristic when using a droplet epitaxy patterning process, the density of quantum dot molecules finally obtained is low enough (2 × 108 cm−2) to permit their integration as active elements in advanced photonic devices where spectroscopic studies at the single nanostructure level are required.
Description: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License.-- This article is part of the series 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
Publisher version (URL): http://dx.doi.org/10.1007/s11671-010-9771-2
URI: http://hdl.handle.net/10261/44926
DOI: 10.1007/s11671-010-9771-2
ISSN: 1556-276X
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