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Title

Characterization of doped amorphous silicon thin films through the investigation of dopant elements by glow discharge spectrometry: A correlation of conductivity and bandgap energy measurements

AuthorsLorenzo, Olaya; Menéndez, José Luis
KeywordsThin film solar cells
Hydrogenated amorphous silicon
Bandgap energy
Ellipsometry
Depth profiling analysis
Glow discharge optical emission spectrometry
Issue Date2011
PublisherMultidisciplinary Digital Publishing Institute
CitationInternational Journal of Molecular Sciences 12(4): 2200-2215 (2011)
AbstractThe determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B2H6 and SiH4 fluxes (B2H6 from 12 sccm to 20 sccm and SiH4 from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples.
Description16 páginas, 4 figuras, 4 tablas.-- et al.
Publisher version (URL)http://dx.doi.org/10.3390/ijms12042200
URIhttp://hdl.handle.net/10261/43850
DOI10.3390/ijms12042200
ISSN1422-0067
Appears in Collections:(CINN) Artículos
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