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dc.contributor.authorVellvehi Hernández, Miquel-
dc.contributor.authorGálvez Sánchez, José Luis-
dc.contributor.authorPerpiñá Giribet, Xavier-
dc.contributor.authorJordà, Xavier-
dc.contributor.authorGodignon, Philippe-
dc.contributor.authorMillán, José-
dc.date.accessioned2011-10-03T10:43:40Z-
dc.date.available2011-10-03T10:43:40Z-
dc.date.issued2010-11-
dc.identifier.citationMicroelectronic Engineering 87 (11) : 2323-2327 (2010)es_ES
dc.identifier.issn0167-9317-
dc.identifier.urihttp://hdl.handle.net/10261/40474-
dc.description.abstractA new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsclosedAccesses_ES
dc.subjectIGBTes_ES
dc.subjectReverse blockinges_ES
dc.subjectAC/AC converteres_ES
dc.subjectMatrix Converteres_ES
dc.titleLow-cost trench isolation technique for reverse blocking IGBT using boron nitride doping waferses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/j.mee.2010.03.011-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/j.mee.2010.03.011es_ES
dc.identifier.e-issn1873-5568-
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