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Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers

AuthorsVellvehi Hernández, Miquel; Gálvez Sánchez, José Luis ; Perpiñá Giribet, Xavier; Jordà, Xavier; Godignon, Philippe; Millán, José
Reverse blocking
AC/AC converter
Matrix Converter
Issue DateNov-2010
CitationMicroelectronic Engineering 87 (11) : 2323-2327 (2010)
AbstractA new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices.
Publisher version (URL)http://dx.doi.org/10.1016/j.mee.2010.03.011
Appears in Collections:(ICE) Artículos
(IMB-CNM) Artículos
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