Digital.CSIC > Ciencia y Tecnologías Físicas > Instituto de Microelectrónica de Madrid (IMM-CNM) > (IMM-CNM) Artículos >




Open Access item Strain balanced quantum posts

Authors:Alonso-Álvarez, D.
Alén, Benito
Ripalda, José María
Llorens, José Manuel
Taboada, A. G.
Briones Fernández-Pola, Fernando
Roldán, M. A.
Hernández-Saz, J.
Hernández-Maldonado, D.
Herrera, Miriam
Molina, Sergio I.
Keywords:Electronic density of states, Gallium arsenide, III-V semiconductors, Indium compounds, Molecular beam epitaxial growth, Photoluminescence, Self-assembly, Semiconductor epitaxial layers, Semiconductor growth, Semiconductor quantum dots
Issue Date:27-Apr-2011
Publisher:American Institute of Physics
Citation:Applied Physics Letters 98, 173106 (2011)
Abstract:Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here, we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
Description:3 páginas, 4 figuras
Publisher version (URL):http://dx.doi.org/10.1063/1.3583455
Appears in Collections:(IMM-CNM) Artículos

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.