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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/35942
Title: Strain balanced quantum posts
Authors: Alonso-Álvarez, Diego; Alén, Benito; Ripalda, José María; Llorens Montolio, José Manuel; Taboada, A. G.; Briones Fernández-Pola, Fernando; Roldán, M. A.; Hernández-Saz, J.; Hernández-Maldonado, D.; Herrera, Miriam; Molina, Sergio I.
Keywords: Electronic density of states
Gallium arsenide
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Semiconductor epitaxial layers
Semiconductor growth
Semiconductor quantum dots
Issue Date: 27-Apr-2011
Publisher: American Institute of Physics
Citation: Applied Physics Letters 98, 173106 (2011)
Abstract: Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here, we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
Description: 3 páginas, 4 figuras
Publisher version (URL): http://dx.doi.org/10.1063/1.3583455
URI: http://hdl.handle.net/10261/35942
ISSN: 0003-6951
DOI: 10.1063/1.3583455
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