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Strain balanced quantum posts

AuthorsAlonso-Álvarez, Diego ; Alén, Benito ; Ripalda, José María ; Llorens Montolio, José Manuel ; Taboada, Alfonso G.; Briones Fernández-Pola, Fernando ; Roldán, M. A. ; Hernández-Saz, J.; Hernández-Maldonado, D.; Herrera, Miriam; Molina, Sergio I.
KeywordsElectronic density of states
Gallium arsenide
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Semiconductor epitaxial layers
Semiconductor growth
Semiconductor quantum dots
Issue Date27-Apr-2011
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 98(17): 173106 (2011)
AbstractQuantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here, we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
Description3 páginas, 4 figuras
Publisher version (URL)http://dx.doi.org/10.1063/1.3583455
Appears in Collections:(IMN-CNM) Artículos
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