Please use this identifier to cite or link to this item:
|Título :||HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes|
|Autor :||Anguita, José Virgilio, Briones Fernández-Pola, Fernando|
|Palabras clave :||Micromechanics technology|
Vapor HF/H2O etching
Optical modulator devices
|Fecha de publicación :||31-Jan-1998|
|Citación :||Sensors and Actuators A: Physical 64(3): 247-251 (1998)|
|Resumen:||An HF/H2O vapor etching technique has been applied as a sacrificial oxide etching process step in surface-micromachining technology. This technique does not suffer from the notorious problem known as stiction, i.e., permanent attachment of movable structures to the underlying substrate during drying after a conventional wet etch process is used. Vapor condensation has been controlled by adjusting the temperature difference between the substrate and the HF/H2O liquid source of vapor. Optical modulator devices have been fabricated to demonstrate the large possibilities of the vapor etching technique. Movable polysilicon membranes with a surface area of 10 mm2 and a thickness of 0.73 μm over a 1.65 μm air gap have been routinely obtained with a 100% yield.|
|Versión del editor:||http://dx.doi.org/10.1016/S0924-4247(97)01628-2|
|Appears in Collections:||(IMM-CNM) Artículos|
Files in This Item:
There are no files associated with this item.
Show full item recordCSIC SFX Links
Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.