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|Title:||HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes|
|Authors:||Anguita, José Virgilio; Briones Fernández-Pola, Fernando|
Vapor HF/H2O etching
Optical modulator devices
|Citation:||Sensors and Actuators A: Physical 64(3): 247-251 (1998)|
|Abstract:||An HF/H2O vapor etching technique has been applied as a sacrificial oxide etching process step in surface-micromachining technology. This technique does not suffer from the notorious problem known as stiction, i.e., permanent attachment of movable structures to the underlying substrate during drying after a conventional wet etch process is used. Vapor condensation has been controlled by adjusting the temperature difference between the substrate and the HF/H2O liquid source of vapor. Optical modulator devices have been fabricated to demonstrate the large possibilities of the vapor etching technique. Movable polysilicon membranes with a surface area of 10 mm2 and a thickness of 0.73 μm over a 1.65 μm air gap have been routinely obtained with a 100% yield.|
|Publisher version (URL):||http://dx.doi.org/10.1016/S0924-4247(97)01628-2|
|Appears in Collections:||(IMM-CNM) Artículos|
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