Please use this identifier to cite or link to this item:
Título : In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds
Autor : Silveira, Juan Pedro, Briones Fernández-Pola, Fernando
Palabras clave : Surface stress
Surface reconstruction
Fecha de publicación : May-1999
Editor: Elsevier
Resumen: Anisotropic surface stress associated with the different surface reconstructions of (0 0 1)GaAs is measured in situ in an MBE system. We use an optical deflection technique on Image and [1 1 0] oriented cantilevers fabricated on thinned wafer areas. Changes of surface stress, associated with the As and Ga dimer surface coverage for c(4×4), 2×4, 3×1 and 4×2 reconstructions, are observed as substrate temperature and impinging molecular flux are being varied. Deflection oscillations can be detected also during MBE growth relating surface stress to surface roughness or step density. Sensitivity and stability of this technique demonstrates its usefulness as new tool to study in situ a variety of surface kinetics and incorporation phenomena.
Versión del editor:
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(98)01301-3
Citación : Journal of Crystal Growth 201-202 : 113-117 (1999)
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
There are no files associated with this item.
Show full item record

Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.