Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/34936
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Título : In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds
Autor : Silveira, Juan Pedro, Briones Fernández-Pola, Fernando
Palabras clave : Surface stress
Surface reconstruction
GaAs
MBE
Fecha de publicación : May-1999
Editor: Elsevier
Citación : Journal of Crystal Growth 201-202 : 113-117 (1999)
Resumen: Anisotropic surface stress associated with the different surface reconstructions of (0 0 1)GaAs is measured in situ in an MBE system. We use an optical deflection technique on Image and [1 1 0] oriented cantilevers fabricated on thinned wafer areas. Changes of surface stress, associated with the As and Ga dimer surface coverage for c(4×4), 2×4, 3×1 and 4×2 reconstructions, are observed as substrate temperature and impinging molecular flux are being varied. Deflection oscillations can be detected also during MBE growth relating surface stress to surface roughness or step density. Sensitivity and stability of this technique demonstrates its usefulness as new tool to study in situ a variety of surface kinetics and incorporation phenomena.
Versión del editor: http://dx.doi.org/10.1016/S0022-0248(98)01301-3
URI : http://hdl.handle.net/10261/34936
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(98)01301-3
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