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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/34936
Title: In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds
Authors: Silveira, Juan Pedro ; Briones Fernández-Pola, Fernando
Keywords: Surface stress
Surface reconstruction
Issue Date: May-1999
Publisher: Elsevier
Citation: Journal of Crystal Growth 201-202 : 113-117 (1999)
Abstract: Anisotropic surface stress associated with the different surface reconstructions of (0 0 1)GaAs is measured in situ in an MBE system. We use an optical deflection technique on Image and [1 1 0] oriented cantilevers fabricated on thinned wafer areas. Changes of surface stress, associated with the As and Ga dimer surface coverage for c(4×4), 2×4, 3×1 and 4×2 reconstructions, are observed as substrate temperature and impinging molecular flux are being varied. Deflection oscillations can be detected also during MBE growth relating surface stress to surface roughness or step density. Sensitivity and stability of this technique demonstrates its usefulness as new tool to study in situ a variety of surface kinetics and incorporation phenomena.
Publisher version (URL): http://dx.doi.org/10.1016/S0022-0248(98)01301-3
URI: http://hdl.handle.net/10261/34936
DOI: 10.1016/S0022-0248(98)01301-3
ISSN: 0022-0248
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