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| Title: | Atomic layer molecular beam epitaxy of InAs/A1As heterostructures |
Authors: | Vázquez López, Manuel CSIC ORCID; Silveira, Juan Pedro CSIC; González Sotos, Luisa CSIC ORCID ; Pérez, Mar CSIC ORCID; Armelles Reig, Gaspar CSIC ORCID; Miguel, José Luis de CSIC; Briones Fernández-Pola, Fernando CSIC | Issue Date: | 1-Jun-1990 | Publisher: | Elsevier | Citation: | Journal of Crystal Growth 102(4): 891-898 (1990) | Abstract: | Experimental results on 0.3 μm thick (A1As)m(InAs)n superlattices (m, n = 1, 2, 3, 5, 10 monolayers) grown by atomic layer molecular beam epitaxy on (100) GaAs substrates are presented, X-ray and Raman experiments show that they are decoupled from the substrate in the range of composition studied. These results are compared with lattice relaxation data of thick layers of InAs (A1As) grown on A1As (InAs) by the same technique. | Description: | 8 páginas, 6 figuras, 1 tabla. | Publisher version (URL): | http://dx.doi.org/10.1016/0022-0248(90)90857-H | URI: | http://hdl.handle.net/10261/33876 | DOI: | 10.1016/0022-0248(90)90857-H | ISSN: | 0022-0248 |
| Appears in Collections: | (IMN-CNM) Artículos |
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