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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33876
Title: Atomic layer molecular beam epitaxy of InAs/A1As heterostructures
Authors: Vázquez, M.; Silveira, Juan Pedro ; González Sotos, Luisa ; Pérez, M.; Armelles Reig, Gaspar ; Miguel, José Luis de; Briones Fernández-Pola, Fernando
Issue Date: 1-Jun-1990
Publisher: Elsevier
Citation: Journal of Crystal Growth 102(4): 891-898 (1990)
Abstract: Experimental results on 0.3 μm thick (A1As)m(InAs)n superlattices (m, n = 1, 2, 3, 5, 10 monolayers) grown by atomic layer molecular beam epitaxy on (100) GaAs substrates are presented, X-ray and Raman experiments show that they are decoupled from the substrate in the range of composition studied. These results are compared with lattice relaxation data of thick layers of InAs (A1As) grown on A1As (InAs) by the same technique.
Description: 8 páginas, 6 figuras, 1 tabla.
Publisher version (URL): http://dx.doi.org/10.1016/0022-0248(90)90857-H
URI: http://hdl.handle.net/10261/33876
DOI: 10.1016/0022-0248(90)90857-H
ISSN: 0022-0248
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