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Title

Atomic layer molecular beam epitaxy of InAs/A1As heterostructures

AuthorsVázquez, M.; Silveira, Juan Pedro ; González Sotos, Luisa ; Pérez, M.; Armelles Reig, Gaspar ; Miguel, José Luis de; Briones Fernández-Pola, Fernando
Issue Date1-Jun-1990
PublisherElsevier
CitationJournal of Crystal Growth 102(4): 891-898 (1990)
AbstractExperimental results on 0.3 μm thick (A1As)m(InAs)n superlattices (m, n = 1, 2, 3, 5, 10 monolayers) grown by atomic layer molecular beam epitaxy on (100) GaAs substrates are presented, X-ray and Raman experiments show that they are decoupled from the substrate in the range of composition studied. These results are compared with lattice relaxation data of thick layers of InAs (A1As) grown on A1As (InAs) by the same technique.
Description8 páginas, 6 figuras, 1 tabla.
Publisher version (URL)http://dx.doi.org/10.1016/0022-0248(90)90857-H
URIhttp://hdl.handle.net/10261/33876
DOI10.1016/0022-0248(90)90857-H
ISSN0022-0248
Appears in Collections:(IMN-CNM) Artículos
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