Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33875
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Título : Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates
Autor : Ruiz, A., González Sotos, Luisa, Mazuelas Esteban, Ángel José, Briones Fernández-Pola, Fernando
Fecha de publicación : Nov-1989
Editor: Springer
Citación : Applied Physics A 49(5): 543-545 (1989)
Resumen: InAs layers with thickness ranging from 0.1 to 2.5 μm have been grown directly on highly mismatched (7.4%) (001) GaAs substrates by atomic layer molecular beam epitaxy (ALMBE). This growth method, based on the modulated deposition of one or both component species, provides InAs layers with excellent flat morphology, independently of the total thickness. A detailed study of the evolution of the electron diffraction (RHEED) pattern indicates that a complete decoupling between the InAs epitaxial layer and the GaAs substrate is reached in less that 10 monolayers. Evidence is obtained that layer-by-layer nucleation takes place from the beginning of the growth.
Descripción : 3 páginas, 3 figuras, 1 tabla.-- PACS: 68.55.+b
Versión del editor: http://dx.doi.org/10.1007/BF00617022
URI : http://hdl.handle.net/10261/33875
ISSN: 0947-8396
DOI: 10.1007/BF00617022
Appears in Collections:(IMM-CNM) Artículos

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