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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33874
Title: Atomic layer molecular beam epitaxy (Almbe) of III–V compounds: Growth modes and applications
Authors: Briones Fernández-Pola, Fernando ; González Sotos, Luisa ; Ruiz, A.
Issue Date: Dec-1989
Publisher: Springer
Citation: Applied Physics A 49(6): 729-737 (1989)
Abstract: A new development of molecular beam epitaxy (MBE) for III–V compounds is described, based on cyclic perturbation of the growth front at atomic layer level by periodic pulsing, alternating or interrupting the molecular beams. The modification of the growth mechanism caused by this perturbations is discussed and related to periodic changes of surface stoichiometry which induce 2D growth mechanism by enhanced layer nucleation. Under appropriate modulation conditions, an atomic layer by layer growth mode can be achieved. A practical implementention of this mode, that we denote atomic layer MBE (ALMBE), is considered in which only group V beams are pulsed in a specially designed effusion cell. A number of growth applications of ALMBE are presented, including growth of highly mismatched heterostructures and short period superlattices containing two different group V elements such as arsenic and phosphorous.
Description: 9 páginas, 7 figuras.-- PACS: 68.55. +b, 82.40.Dm, 61.14.Hg
Publisher version (URL): http://dx.doi.org/10.1007/BF00617001
URI: http://hdl.handle.net/10261/33874
DOI: 10.1007/BF00617001
ISSN: 0947-8396
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