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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33871
Title: Atomic layer MBE growth and characterization of AlAs/InAs strained layer superlattices on GaAs
Authors: González Sotos, Luisa; Ruiz, A.; Mazuelas Esteban, Ángel José; Armelles Reig, Gaspar; Recio Segoviano, Miguel; Briones Fernández-Pola, Fernando
Issue Date: 1989
Publisher: Elsevier
Citation: Superlattices and Microstructures 5(1): 5-9 (1989)
Abstract: A recent development of Molecular Beam Epitaxy (MBE) — the Atomic Layer Molecular Beam Epitaxy — has been used to grow AlAs/InAs strained layer superlattices (SLS) on (001)GaAs at low growth temperatures (Ts < 400°C). The growth process basically consists on alternating group V and/or group III beams following an optimum timing established by RHEED oscillations observation during the monolayer formation sequence. This method allows to grow at low substrate temperature with excellent morphology, even for those systems which have extremely different optimum MBE growth conditions and a severe lattice mismatch of 7% like AlAs/InAs. X-ray diffraction and optical characterization results for superlattices of different periodicities are presented. In particular, Raman spectra of these samples showing folded acoustic phonons demonstrate their quality.
Description: 5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada a la 4ª Conference on Superlattices and Microstructures celebrada en Trieste (Italia/1988).
Publisher version (URL): http://dx.doi.org/10.1016/0749-6036(89)90060-8
URI: http://hdl.handle.net/10261/33871
ISSN: 0749-6036
DOI: 10.1016/0749-6036(89)90060-8
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