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Title: | Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) |
Authors: | Briones Fernández-Pola, Fernando CSIC; Golmayo, Dolores CSIC; González Sotos, Luisa CSIC ORCID ; Miguel, José Luis de CSIC | Issue Date: | 1985 | Publisher: | Springer Nature | Citation: | Applied Physics A 36(3): 147-151 (1985) | Abstract: | H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1–x As as sulphur vector forn-type doping. Doping efficiencies are less than 10–3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1–x As forx >= 0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645 ‡C range. | Description: | 5 páginas, 6 figuras, 1 tabla.-- PACS: 68.55, 73.60 | Publisher version (URL): | http://dx.doi.org/10.1007/BF00624935 | URI: | http://hdl.handle.net/10261/33859 | DOI: | 10.1007/BF00624935 | ISSN: | 0947-8396 |
Appears in Collections: | (ICMM) Artículos |
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