Please use this identifier to cite or link to this item:
Título : Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE)
Autor : Briones Fernández-Pola, Fernando, Golmayo, Dolores, González Sotos, Luisa, Miguel, José Luis de
Fecha de publicación : 1985
Editor: Springer
Resumen: H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1–x As as sulphur vector forn-type doping. Doping efficiencies are less than 10–3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1–x As forx >= 0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645 ‡C range.
Descripción : 5 páginas, 6 figuras, 1 tabla.-- PACS: 68.55, 73.60
Versión del editor:
ISSN: 0947-8396
DOI: 10.1007/BF00624935
Citación : Applied Physics A 36(3): 147-151 (1985)
Appears in Collections:(ICMM) Artículos

Files in This Item:
There are no files associated with this item.
Show full item record

Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.