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In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si (001)

AuthorsGonzález Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando
Issue Date1991
PublisherJapanese Society of Applied Physics
CitationJapanese Journal of Applied Physics 30: L235-L238 (1991)
AbstractReflectance Anisotropy Technique is used for the first time to in situ monitor the Antiphase Domain annihilation process during Atomic Layer Molecular Beam Epitaxy (ALMBE) growth of GaAs on Si (001)2° off towards [110] direction. We show that this technique is able to provide quantitative information on the domain evolution from the onset of growth, making possible an accurate determination of the thickness at which single domain GaAs growth front is achieved. Experimental data obtained with this new technique during growth under different conditions might be useful with the modelling of APD annihilation mechanism.
Description4 páginas.
Publisher version (URL)http://dx.doi.org/10.1143/JJAP.30.L235
Appears in Collections:(IMN-CNM) Artículos
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