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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33837
Title: GaAs electrolyte electroreflectance: low-field spectra and flat-band potential shift measurements
Authors: Salvador, Patricia; González Díez, Yolanda ; González Sotos, Luisa
Issue Date: 2-Apr-1991
Publisher: Elsevier
Citation: Surface Science 245(3): 324-332 (1991)
Abstract: The electrolyte electroreflectance (HER) spectra of GaAs crystals, both undoped, highly compensated (NA ≈ ND = 3 × 1015 cm−3 and n-type (Nd = 1017cm−3), were studied as a function of the applied bias in the photon energy range corresponding to EE0 + Δ0 transitions. Unequivocal experimental evidence was obtained for the first time that the low-field limit of Aspnes third-derivative model applies to sufficiently low doped GaAs samples, as is the case for our undoped crystal. In this case, a reliable measurement of the flat-band potential (Vfb) could be obtained by means of HER voltammetries. The behaviour of the n-type sample was found to be different in two main aspects: first, low field conditions could not be fitted; second, Vfb appeared shifted by about 2.0 V towards negative values because of a strong Fermi-level pinning effect associated with the surface electro-reduction of the electrode. These Vfb shifts, which are associated with the n-type character, prevent any reliable Vfb measurement, even if the concentration of free carriers is sufficiently low and low-field conditions are fulfilled.
Description: 9 páginas, 6 figuras.
Publisher version (URL): http://dx.doi.org/10.1016/0039-6028(91)90034-P
URI: http://hdl.handle.net/10261/33837
DOI: 10.1016/0039-6028(91)90034-P
ISSN: 0039-6028
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