Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33837
Share/Impact:
Título : GaAs electrolyte electroreflectance: low-field spectra and flat-band potential shift measurements
Autor : Salvador, P., González Díez, Yolanda, González Sotos, Luisa
Fecha de publicación : 2-Apr-1991
Editor: Elsevier
Resumen: The electrolyte electroreflectance (HER) spectra of GaAs crystals, both undoped, highly compensated (NA ≈ ND = 3 × 1015 cm−3 and n-type (Nd = 1017cm−3), were studied as a function of the applied bias in the photon energy range corresponding to EE0 + Δ0 transitions. Unequivocal experimental evidence was obtained for the first time that the low-field limit of Aspnes third-derivative model applies to sufficiently low doped GaAs samples, as is the case for our undoped crystal. In this case, a reliable measurement of the flat-band potential (Vfb) could be obtained by means of HER voltammetries. The behaviour of the n-type sample was found to be different in two main aspects: first, low field conditions could not be fitted; second, Vfb appeared shifted by about 2.0 V towards negative values because of a strong Fermi-level pinning effect associated with the surface electro-reduction of the electrode. These Vfb shifts, which are associated with the n-type character, prevent any reliable Vfb measurement, even if the concentration of free carriers is sufficiently low and low-field conditions are fulfilled.
Descripción : 9 páginas, 6 figuras.
Versión del editor: http://dx.doi.org/10.1016/0039-6028(91)90034-P
URI : http://hdl.handle.net/10261/33837
ISSN: 0039-6028
DOI: 10.1016/0039-6028(91)90034-P
Citación : Surface Science 245(3): 324-332 (1991)
Appears in Collections:(IMM-CNM) Artículos
(ICP) Artículos

Files in This Item:
There are no files associated with this item.
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.