Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33831
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Título : Low Temperature GaAs/Si Technology: from Si Substrate Preparation to the Epitaxial Growth
Autor : González Díez, Yolanda, González Sotos, Luisa, Briones Fernández-Pola, Fernando
Palabras clave : GaAs/Si technology
Low temperature epitaxial process
ALMBE
AlAs/GaAs epitaxial growth
Optical modulator structures
Fecha de publicación : 1992
Editor: Japanese Society of Applied Physics
Resumen: An actual development of GaAs/Si technology is subjected entirely to reduce the temperature of the full growth process, from the Si surface preparation to the epitaxial growth itself. In this paper we demonstrate the successful combination of a low temperature Si surtace preparation process (400°C<TSi<550°C) adequate for further III-V epitaxial growth with a low temperature growth process (Tg=300°C) using Atomic Layer Molecular Beam Epitaxy (ALMBE). Experimental results obtained on reflection modulator structures grown at Tg=300°C by ALMBE on low temperature prepared Si substrates permit an actual advancement towards monolithic integration of III-V devices to Si circuits.
Descripción : 4 páginas.
Versión del editor: http://dx.doi.org/10.1143/JJAP.31.L816
URI : http://hdl.handle.net/10261/33831
ISSN: 0021-4922
DOI: 10.1143/JJAP.31.L816
Citación : Japanese Journal of Applied Physics 31: L816-L819 (1992)
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