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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33831
Title: Low Temperature GaAs/Si Technology: from Si Substrate Preparation to the Epitaxial Growth
Authors: González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando
Keywords: GaAs/Si technology
Low temperature epitaxial process
AlAs/GaAs epitaxial growth
Optical modulator structures
Issue Date: 1992
Publisher: Japanese Society of Applied Physics
Citation: Japanese Journal of Applied Physics 31: L816-L819 (1992)
Abstract: An actual development of GaAs/Si technology is subjected entirely to reduce the temperature of the full growth process, from the Si surface preparation to the epitaxial growth itself. In this paper we demonstrate the successful combination of a low temperature Si surtace preparation process (400°C<TSi<550°C) adequate for further III-V epitaxial growth with a low temperature growth process (Tg=300°C) using Atomic Layer Molecular Beam Epitaxy (ALMBE). Experimental results obtained on reflection modulator structures grown at Tg=300°C by ALMBE on low temperature prepared Si substrates permit an actual advancement towards monolithic integration of III-V devices to Si circuits.
Description: 4 páginas.
Publisher version (URL): http://dx.doi.org/10.1143/JJAP.31.L816
URI: http://hdl.handle.net/10261/33831
DOI: 10.1143/JJAP.31.L816
ISSN: 0021-4922
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