Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33829
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Título : GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substrates
Autor : González Díez, Yolanda, González Sotos, Luisa, Briones Fernández-Pola, Fernando
Fecha de publicación : Feb-1993
Editor: Elsevier
Citación : Journal of Crystal Growth 127(1-4): 116-120 (1993)
Resumen: We propose the introduction of Ga1-yInyAs / GaAs1-xPx strained layer superlattices as buffer layers in order to obtain GaAs layers on Si substrates with low dislocation density and free of residual stress, while keeping the III–V process at temperatures below 400°C to make it compatible with current CMOS technologies. The main difficulty of these buffer layers is the required accurate control of the phosphorus incorporation. In this paper we present a low temperature growth process based on the combination of atomic layer molecular beam epitaxy technique with in-situ reflectivity difference characterization, which allows an accurate control to be carried out of the GaAs1-xPx alloy layers even at very low phosphorus content. Results on Ga1−yInyAs / GaAs1-xPx strained layer superlattices are also presented.
Descripción : 5 páginas, 4 figuras.-- Póster presentado a la 7ª International Conference on Molecular Beam Epitaxy celebrada en Schwäbisch Gmünd (Alemania/1992).
Versión del editor: http://dx.doi.org/10.1016/0022-0248(93)90589-O
URI : http://hdl.handle.net/10261/33829
ISSN: 0022-0248
DOI: 10.1016/0022-0248(93)90589-O
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