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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33828
Title: Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si
Authors: Molina, Sergio I.; Aragón, G.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; Ponce, F. A.; García, Rafael
Issue Date: Jan-1993
Publisher: Elsevier
Citation: Materials Letters 15(5-6): 353-355 (1993)
Abstract: A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.
Description: 3 páginas, 2 figuras.
Publisher version (URL): http://dx.doi.org/10.1016/0167-577X(93)90094-E
URI: http://hdl.handle.net/10261/33828
DOI: 10.1016/0167-577X(93)90094-E
ISSN: 0167-577X
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