Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33828
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Título : Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si
Autor : Molina, Sergio I., Aragón, G., González Díez, Yolanda, González Sotos, Luisa, Briones Fernández-Pola, Fernando, Ponce, F. A., García, Rafael
Fecha de publicación : Jan-1993
Editor: Elsevier
Citación : Materials Letters 15(5-6): 353-355 (1993)
Resumen: A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.
Descripción : 3 páginas, 2 figuras.
Versión del editor: http://dx.doi.org/10.1016/0167-577X(93)90094-E
URI : http://hdl.handle.net/10261/33828
ISSN: 0167-577X
DOI: 10.1016/0167-577X(93)90094-E
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