Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/33826
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | A study of the evolution process of antiphase boundaries in GaAs on Si |
Autor: | Molina, Sergio I.; Aragón, G.; García, Rafael; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID ; Briones Fernández-Pola, Fernando CSIC | Palabras clave: | ALMBE Antiphase boundaries GaAs on silicon |
Fecha de publicación: | 1993 | Editor: | Springer Nature | Citación: | Journal of Electronic Materials 22(5): 565-572 (1993) | Resumen: | A study by high resolution electron microscopy and conventional transmission electron microscopy of the process of closure of antiphase boundaries (APB) in atomic layer molecular beam epitaxy (ALMBE) grown GaAs on silicon is reported. A parallelepipedical shape, closed at the top by another boundary with a semispheric shape, is proposed for the during growth suppressed APBs in GaAs epilayers. Antiphase boundaries are mostly located in {100} plans. Sixty degree dislocations are involved in the process of bending of APBs from {110} to {11n} planes; this bending is the initial step which must take place to get a single domain by interaction of two APBs. The proposed shape for closed APBs is in good agreement with the quasi two-dimensional growth observed for GaAs grown on silicon by ALMBE. | Descripción: | 6 páginas. | Versión del editor: | http://dx.doi.org/10.1007/BF02661632 | URI: | http://hdl.handle.net/10261/33826 | DOI: | 10.1007/BF02661632 | ISSN: | 0361-5235 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
Mostrar el registro completo
CORE Recommender
SCOPUSTM
Citations
9
checked on 25-mar-2024
WEB OF SCIENCETM
Citations
9
checked on 27-feb-2024
Page view(s)
386
checked on 18-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.