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Título

A study of the evolution process of antiphase boundaries in GaAs on Si

AutorMolina, Sergio I.; Aragón, G.; García, Rafael; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando
Palabras claveALMBE
Antiphase boundaries
GaAs on silicon
Fecha de publicación1993
EditorSpringer
CitaciónJournal of Electronic Materials 22(5): 565-572 (1993)
ResumenA study by high resolution electron microscopy and conventional transmission electron microscopy of the process of closure of antiphase boundaries (APB) in atomic layer molecular beam epitaxy (ALMBE) grown GaAs on silicon is reported. A parallelepipedical shape, closed at the top by another boundary with a semispheric shape, is proposed for the during growth suppressed APBs in GaAs epilayers. Antiphase boundaries are mostly located in {100} plans. Sixty degree dislocations are involved in the process of bending of APBs from {110} to {11n} planes; this bending is the initial step which must take place to get a single domain by interaction of two APBs. The proposed shape for closed APBs is in good agreement with the quasi two-dimensional growth observed for GaAs grown on silicon by ALMBE.
Descripción6 páginas.
Versión del editorhttp://dx.doi.org/10.1007/BF02661632
URIhttp://hdl.handle.net/10261/33826
DOI10.1007/BF02661632
ISSN0361-5235
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