English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33821
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

AuthorsAragón, G.; Castro, M. J. de; Molina, Sergio I.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; García, Rafael
Issue Date1993
PublisherMaterials Research Society
CitationMRS Proceedings 317: 315-320 (1993)
AbstractThe defect structure of GaAsP layer grown by Atomic Layer Molecular Beam Epitaxy on (001) GaAs substrate has been studied by Transmission Electron Microscopy. The phosphorous content and the epilayer thickness have been changed below 25% and 1μm respectively. Three kinds of defect structure have been found: a) α-δ fringes at the interface for coherent epilayer, b) Misfit dislocation for thin epilayers and c) Multiple cracks normal to the interface and parallel to one <110> direction for thick epilayers.
Description6 páginas.-- Comunicación presentada al 1993 MRS Fall Meeting, Symposium B – Mechanisms of Thin Film Evolution.
Publisher version (URL)http://dx.doi.org/10.1557/PROC-317-315
URIhttp://hdl.handle.net/10261/33821
DOI10.1557/PROC-317-315
ISSN0272-9172
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.