English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33811
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

AuthorsDunstan, D. J.; Kidd, P.; David, J. P. R.; González Sotos, Luisa ; González Díez, Yolanda
Issue Date15-Aug-1994
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 65(7): 839-841 (1994)
AbstractThe plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed.
Description3 páginas, 1 figura, 1 tabla.-- et al.
Publisher version (URL)http://dx.doi.org/10.1063/1.112177
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
http___scitation.aip.org10.1063_1.pdf426,99 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.