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| Título: | Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures |
Autor: | Dunstan, D. J.; Kidd, Petra Susan CSIC ORCID; David, J. P. R.; González Sotos, Luisa CSIC ORCID ; González Díez, Yolanda CSIC ORCID | Fecha de publicación: | 15-ago-1994 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 65(7): 839-841 (1994) | Resumen: | The plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed. | Descripción: | 3 páginas, 1 figura, 1 tabla.-- et al. | Versión del editor: | http://dx.doi.org/10.1063/1.112177 | URI: | http://hdl.handle.net/10261/33811 | DOI: | 10.1063/1.112177 | ISSN: | 0003-6951 |
| Aparece en las colecciones: | (IMN-CNM) Artículos |
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| http___scitation.aip.org10.1063_1.pdf | 426,99 kB | Adobe PDF |  Visualizar/Abrir |
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