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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33799
Title: A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates
Authors: Aragón, G.; Molina, Sergio I.; Pacheco, F. J.; González Díez, Yolanda; González Sotos, Luisa; Briones Fernández-Pola, Fernando; García, Rafael
Keywords: Epitaxy of thin films
Gallium arsenide
Molecular beam epitaxy
Transmission electron microscopy
Issue Date: Dec-1994
Publisher: Elsevier
Citation: Materials Science and Engineering B 28(1-3): 196-199 (1994)
Abstract: In this work we report the defect structure of GaAs layers grown on Si (001) substrates by atomic layer molecular beam epitaxy at 350 °C and conventional molecular beam epitaxy at 580 °C, investigated by transmission electron microscopy. It is found that the GaAs layers grown at 580 °C show high threading dislocation densities, whilst the majority defect types in the GaAs layers grown at 350 °C are stacking faults and microtwins. These results can be explained by taking into account that the mobility of partial dislocations depends on both the stress in the epitaxial layer and the growth temperature. According to this dependence, a transition from dissociated threading dislocations at a low temperature (350 °C) to perfect threading dislocations at a high temperature (580 °C) can be expected.
Description: 4 páginas, 3 figuras, 2 tablas.-- Comunicación oral presentada al 2º International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies (EXMATEC'94) celebrado en Parma (Italia/1994).
Publisher version (URL): http://dx.doi.org/10.1016/0921-5107(94)90046-9
URI: http://hdl.handle.net/10261/33799
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90046-9 |
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