Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33796
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Título : Optical properties of (113) GaAs/AlAs superlattices grown by molecular beam epitaxy and atomic layer molecular beam epitaxy
Autor : Armelles Reig, Gaspar, Domínguez, P. S., González Sotos, Luisa
Fecha de publicación : Jan-1995
Editor: American Institute of Physics
Citación : Journal of Applied Physics 77(1): 339-342 (1995)
Resumen: We have investigated the optical properties of GaAs/AlAs superlattices grown by molecular beam epitaxy (MBE) and atomic layer MBE (ALMBE) on {113}A‐oriented GaAs substrates. The corrugation which appears in the samples obtained by MBE does not exhibit any periodicity. Phonon‐associated replicas are only observed on the photoluminescence excitation spectra of ALMBE superlattices. It was found that the observed differences can be attributed to the growth techniques employed in the synthesis of the samples: MBE superlattices have rougher interfaces than the ALMBE ones, but a lower number of nonradiative recombination centers.
Descripción : 4 páginas, 3 figuras.-- et al.
Versión del editor: http://dx.doi.org/10.1063/1.359523
URI : http://hdl.handle.net/10261/33796
ISSN: 0021-8979
DOI: 10.1063/1.359523
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