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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33787
Title: Relaxation behavior of undoped InxGa1−xP 0.5<x<0.7 grown on GaAs by atomic layer molecular‐beam epitaxy
Authors: González Sotos, Luisa ; González Díez, Yolanda ; Aragón, G.; Castro, M. J. de; Dotor, María Luisa ; Dunstan, D. J.
Issue Date: 1996
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 80(6): 3327-3332 (1996)
Abstract: We present a study of the relaxation behavior of compressive InxGa1−xP layers grown by atomic layer molecular‐beam epitaxy at Ts=420 °C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1−xP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1−xP layers were characterized by double‐crystal x‐ray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1−xP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1−xP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in lattice‐mismatched heteroepitaxial systems.
Description: 6 páginas, 5 figuras, 2 tablas.
Publisher version (URL): http://dx.doi.org/10.1063/1.363243
URI: http://hdl.handle.net/10261/33787
DOI: 10.1063/1.363243
ISSN: 0021-8979
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