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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33784
Title: Growth and characterization of self-organized InSb quantum dots and quantum dashes
Authors: Utzmeier, T.; Tamayo de Miguel, Francisco Javier ; Postigo, Pablo Aitor ; García García, Ricardo; Briones Fernández-Pola, Fernando
Issue Date: 1-May-1997
Publisher: Elsevier
Citation: Journal of Crystal Growth 175-176: 725-729 (1997)
Abstract: We have grown self-organized InSb quantum dots on semi-insulating InP (0 0 1) substrates by molecular beam epitaxy. The size dependency of the uncapped InSb quantum dots on the nominal thickness of the deposited InSb was studied by atomic force microscopy. The dot size has a pronounced minimum at about 2.2 monolayers of InSb. After a nominal thickness of 3.2 monolayers we observe a drastic change of the dot shape, from quantum dots to quantum dashes. From thereon the dots grow in a quasi-cylindric shape aligned in the (1 1 0) direction. The photoluminescence emission of a series of quantum dots was studied, the emission energy being independent of the dot size. When the dots partially relax, the photoluminescence is blue-shifted, which can be explained by a type-II band alignment.
Publisher version (URL): http://dx.doi.org/10.1016/S0022-0248(96)00816-0
URI: http://hdl.handle.net/10261/33784
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(96)00816-0
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