Please use this identifier to cite or link to this item:
Título : Advantages of thin interfaces in step-graded buffer structures
Autor : González, David, Araújo, D., González Sotos, Luisa, González Díez, Yolanda, Aragón, G., García, Rafael
Palabras clave : Double crystal X-ray diffraction
Misfit dislocations
Step-graded buffer structures
Transmission electron microscopy
Fecha de publicación : Feb-1997
Editor: Elsevier
Citación : Materials Science and Engineering B 44(1-3): 41-45 (1997)
Resumen: The effect of graded interfaces in step-graded buffer structures on crystal relaxation efficiency is investigated by transmission electron microscopy and double crystal X-ray diffraction. A higher recombination rate leading to higher edge dislocation densities and a strong diminution of the tilt, is evidenced when graded interfaces are used. The latter feature is a consequence of the poor stability of dislocation multiplication sources in graded interfaces. The lower strain energy release of dislocation segments and a diminution of the pinning points in graded interfaces reduce the lifetime of dislocations sources, producing a better distribution of Burgers vector in the misfit dislocations array.
Descripción : 5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada al 3º International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies.
Versión del editor:
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(96)01757-6
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
There are no files associated with this item.
Show full item record

Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.