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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | González Sagardoy, María Ujué | - |
dc.contributor.author | González Díez, Yolanda | - |
dc.contributor.author | González Sotos, Luisa | - |
dc.date.accessioned | 2011-03-24T14:28:00Z | - |
dc.date.available | 2011-03-24T14:28:00Z | - |
dc.date.issued | 2002-03-13 | - |
dc.identifier.citation | Applied Surface Science 188(1-2): 128-133 (2002) | es_ES |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10261/33758 | - |
dc.description | 6 páginas, 2 figuras, 1 tabla.-- Póster presentado al E-MRS 2001 Spring Meeting, Symposium M; Stress and Strain in Heteroepitaxy celebrado en Estrasburgo (Francia/2001). | es_ES |
dc.description.abstract | We have followed, in situ and real-time, both the relaxation and morphological evolution along [1 1 0] direction during the growth of In0.2Ga0.8As/GaAs by molecular beam epitaxy (MBE) at low growth rates (0.2 and 0.5 monolayers per second, i.e. ML/s). The stress measurements were performed by optical monitorization of the strain-induced substrate curvature, and the morphology evolution was assessed by means of laser light scattering (LLS). The correlation of the real-time results obtained from both in situ techniques allowed us to detect the existence of a growth rate dependent initial elastic relaxation regime, which is associated with the development of a long-range ordered rippled-like morphology along [1 -^1 0] direction. | es_ES |
dc.description.sponsorship | This work was supported by Spanish "CICYT" under Project Nº MAT2000-1625. M.U. González thanks the Consejería de Educación y Cultura de la Comunidad de Madrid for financial support. | es_ES |
dc.description.sponsorship | Spanish "CICYT" | - |
dc.description.sponsorship | Consejería de Educación y Cultura de la Comunidad de Madrid | - |
dc.language.iso | eng | es_ES |
dc.publisher | Elsevier | es_ES |
dc.rights | openAccess | es_ES |
dc.subject | Elastic relaxation | es_ES |
dc.subject | Surface morphology | es_ES |
dc.subject | Relaxation mechanisms | es_ES |
dc.subject | In situ laser light scattering | es_ES |
dc.subject | In situ stress measurements | es_ES |
dc.subject | Molecular beam epitaxy | es_ES |
dc.title | In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(0 0 1) | es_ES |
dc.type | póster de congreso | es_ES |
dc.identifier.doi | 10.1016/S0169-4332(01)00768-1 | - |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1016/S0169-4332(01)00768-1 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6670 | es_ES |
item.openairetype | póster de congreso | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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situ_detection_Gonzalez.pdf | 248,53 kB | Adobe PDF | Visualizar/Abrir |
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