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In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(0 0 1)

AuthorsGonzález Sagardoy, María Ujué ; González Díez, Yolanda ; González Sotos, Luisa
KeywordsElastic relaxation
Surface morphology
Relaxation mechanisms
In situ laser light scattering
In situ stress measurements
Molecular beam epitaxy
Issue Date13-Mar-2002
CitationApplied Surface Science 188(1-2): 128-133 (2002)
AbstractWe have followed, in situ and real-time, both the relaxation and morphological evolution along [1 1 0] direction during the growth of In0.2Ga0.8As/GaAs by molecular beam epitaxy (MBE) at low growth rates (0.2 and 0.5 monolayers per second, i.e. ML/s). The stress measurements were performed by optical monitorization of the strain-induced substrate curvature, and the morphology evolution was assessed by means of laser light scattering (LLS). The correlation of the real-time results obtained from both in situ techniques allowed us to detect the existence of a growth rate dependent initial elastic relaxation regime, which is associated with the development of a long-range ordered rippled-like morphology along [1 -^1 0] direction.
Description6 páginas, 2 figuras, 1 tabla.-- Póster presentado al E-MRS 2001 Spring Meeting, Symposium M; Stress and Strain in Heteroepitaxy celebrado en Estrasburgo (Francia/2001).
Publisher version (URL)http://dx.doi.org/10.1016/S0169-4332(01)00768-1
Appears in Collections:(IMN-CNM) Artículos
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