Digital.CSIC > Ciencia y Tecnologías Físicas > Instituto de Microelectrónica de Madrid (IMM-CNM) > (IMM-CNM) Artículos >



Closed Access item AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layers

Authors:Eremenko, V.
González, Luisa
González, Yolanda
Vdovin, V.
Vázquez, Luis
Aragón, G.
Herrera, Miriam
Briones Fernández-Pola, Fernando
Keywords:Surface morphology, Etching, Transmission electron microscopy, Atomic force microscopy
Issue Date:30-Apr-2002
Citation:Materials Science and Engineering B 91-92: 269-273 (2002)
Abstract:An alternative way to characterise composition modulation in InxGa1−xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along [110]. We propose that morphology features observed in the experiments are related to composition modulation effects.
Description:5 páginas, 4 figuras.-- Póster presentado al DRIP-IX : 9ª International Conference on Defects- Recognition, Imaging and Physics in Semiconductors celebrada en Rimini (Italia) del 24 al 28 de Septiembre de 2001.
Publisher version (URL):http://dx.doi.org/10.1016/S0921-5107(01)01016-9
Appears in Collections:(ICMM) Artículos
(IMM-CNM) Artículos

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.