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Closed Access item AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layers

Authors:Eremenko, V.
González, Luisa
González, Yolanda
Vdovin, V.
Vázquez, Luis
Aragón, G.
Herrera, Miriam
Briones Fernández-Pola, Fernando
Keywords:Surface morphology, Etching, Transmission electron microscopy, Atomic force microscopy
Issue Date:30-Apr-2002
Publisher:Elsevier
Citation:Materials Science and Engineering B 91-92: 269-273 (2002)
Abstract:An alternative way to characterise composition modulation in InxGa1−xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along [110]. We propose that morphology features observed in the experiments are related to composition modulation effects.
Description:5 páginas, 4 figuras.-- Póster presentado al DRIP-IX : 9ª International Conference on Defects- Recognition, Imaging and Physics in Semiconductors celebrada en Rimini (Italia) del 24 al 28 de Septiembre de 2001.
Publisher version (URL):http://dx.doi.org/10.1016/S0921-5107(01)01016-9
URI:http://hdl.handle.net/10261/33757
ISSN:0921-5107
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(IMM-CNM) Artículos

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