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dc.contributor.authorRudamas, C.-
dc.contributor.authorMartínez Pastor, Juan Pascual-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorVinattieri, A.-
dc.contributor.authorColocci, M.-
dc.date.accessioned2011-03-24T13:54:48Z-
dc.date.available2011-03-24T13:54:48Z-
dc.date.issued2002-06-
dc.identifier.citationSurface Science 507-510: 619-623 (2002)es_ES
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10261/33756-
dc.description5 páginas, 4 figuras.es_ES
dc.description.abstractGaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsible of the observed phenomenology: non-exponential decay behavior at long times and slow decrease of the effective recombination time by increasing temperature. A two-class exciton kinetic model, based on a mobility edge varying with the temperature explain the experimental results.es_ES
dc.description.sponsorshipThis work has been supported by the Spanish Ministerio de Ciencia y Tecnolog ıa under project number TIC99-1035-C02. The main author (C.R.) also thanks the spanish Ministerio de Asuntos Exteriores (MUTIS program).es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsclosedAccesses_ES
dc.subjectQuantum wellses_ES
dc.subjectGallium arsenidees_ES
dc.subjectQuantum effectses_ES
dc.subjectPhotoluminescencees_ES
dc.subjectMolecular beam epitaxyes_ES
dc.titleConsequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructureses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/S0039-6028(02)01325-0-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/S0039-6028(02)01325-0es_ES
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