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Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures

AuthorsRudamas, C.; Martínez Pastor, Juan Pascual ; González Sotos, Luisa ; Vinattieri, A.; Colocci, M.
KeywordsQuantum wells
Gallium arsenide
Quantum effects
Molecular beam epitaxy
Issue DateJun-2002
CitationSurface Science 507-510: 619-623 (2002)
AbstractGaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsible of the observed phenomenology: non-exponential decay behavior at long times and slow decrease of the effective recombination time by increasing temperature. A two-class exciton kinetic model, based on a mobility edge varying with the temperature explain the experimental results.
Description5 páginas, 4 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/S0039-6028(02)01325-0
Appears in Collections:(IMN-CNM) Artículos
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