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Título: | Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures |
Autor: | Rudamas, C.; Martínez Pastor, Juan Pascual CSIC ORCID; González Sotos, Luisa CSIC ORCID ; Vinattieri, A.; Colocci, M. | Palabras clave: | Quantum wells Gallium arsenide Quantum effects Photoluminescence Molecular beam epitaxy |
Fecha de publicación: | jun-2002 | Editor: | Elsevier | Citación: | Surface Science 507-510: 619-623 (2002) | Resumen: | GaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsible of the observed phenomenology: non-exponential decay behavior at long times and slow decrease of the effective recombination time by increasing temperature. A two-class exciton kinetic model, based on a mobility edge varying with the temperature explain the experimental results. | Descripción: | 5 páginas, 4 figuras. | Versión del editor: | http://dx.doi.org/10.1016/S0039-6028(02)01325-0 | URI: | http://hdl.handle.net/10261/33756 | DOI: | 10.1016/S0039-6028(02)01325-0 | ISSN: | 0039-6028 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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