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dc.contributor.authorRudamas, C.-
dc.contributor.authorMartínez Pastor, Juan Pascual-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorVinattieri, A.-
dc.contributor.authorColocci, M.-
dc.date.accessioned2011-03-24T13:16:54Z-
dc.date.available2011-03-24T13:16:54Z-
dc.date.issued2003-04-
dc.identifier.citationPhysica E 17: 206-208 (2003)es_ES
dc.identifier.issn1386-9477-
dc.identifier.urihttp://hdl.handle.net/10261/33752-
dc.description3 páginas, 1 figura.-- Comunicación presentada al Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002.es_ES
dc.description.abstractThe temperature dependence of the effective mobility edge in semiconductor quantum wells containing disorder is reported for the first time. It is deduced by reproducing the experimental continuous wave and time resolved luminescence spectra by means of a two-class exciton kinetic model, which considers the co-existence of free and localized excitons and introduces a mobility edge defined by a Fermi function. The mobility edge varies faster than the PL peak energy when the temperature increases, passing from the high energy side of the PL band at low temperatures (recombination of localized excitons dominates) to the low energy side above 125 K (recombination of quasi-free excitons dominates).es_ES
dc.description.sponsorshipThis work has been supportedby the Spanish CICYT under the project no. TIC99-1035.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsclosedAccesses_ES
dc.subjectQuantum wellses_ES
dc.subjectPhotoluminescencees_ES
dc.subjectDisorderes_ES
dc.titleTemperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wellses_ES
dc.typecomunicación de congresoes_ES
dc.identifier.doi10.1016/S1386-9477(02)00774-9-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/S1386-9477(02)00774-9es_ES
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