English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33752
logo share SHARE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

AuthorsRudamas, C.; Martínez Pastor, Juan Pascual ; González Sotos, Luisa ; Vinattieri, A.; Colocci, M.
KeywordsQuantum wells
Issue DateApr-2003
CitationPhysica E 17: 206-208 (2003)
AbstractThe temperature dependence of the effective mobility edge in semiconductor quantum wells containing disorder is reported for the first time. It is deduced by reproducing the experimental continuous wave and time resolved luminescence spectra by means of a two-class exciton kinetic model, which considers the co-existence of free and localized excitons and introduces a mobility edge defined by a Fermi function. The mobility edge varies faster than the PL peak energy when the temperature increases, passing from the high energy side of the PL band at low temperatures (recombination of localized excitons dominates) to the low energy side above 125 K (recombination of quasi-free excitons dominates).
Description3 páginas, 1 figura.-- Comunicación presentada al Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002.
Publisher version (URL)http://dx.doi.org/10.1016/S1386-9477(02)00774-9
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.